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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *High-voltage capability *Fast switching speeds *Low collector saturation voltage APPLICATIONS *They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N5466 2N5467 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=) SYMBOL PARAMETER 2N5466 VCBO Collector-base voltage 2N5467 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open base Open collector Open emitter 700 400 7 3 5 1 140 150 -65~200 V V A A A W CONDITIONS VALUE 500 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.48 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5466 2N5467 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 400 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 2.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 2.0 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 VCE=ratedVCEO;VBE(off)=1.5V TC=125 VEB=5V; IC=0 1.0 1.0 5.0 1.0 mA ICEV Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=4V 15 45 hFE-2 DC current gain IC=2A ; VCE=4V 8 fT Trainsistion frequency IC=1A ; VCE=10V;f=1MHz 2.5 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5466 2N5467 Fig.2 outline dimensions (unindicated tolerance:0.10mm) 3 |
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